Wide voltage range level shifting circuit with isolation function

ABSTRACT

In an embodiment, an apparatus includes an input circuit coupled to a first power supply with a first voltage level, a power circuit coupled to a second power supply with a second voltage level, and an output driver. The input circuit may receive an input signal, and generate an inverted signal dependent upon the input signal. The power circuit may generate a power signal in response to first values of the input and the inverted signals, wherein a voltage level of the power signal may be dependent upon the second voltage level. The power circuit may also generate a third voltage level on the power signal in response to second values of the input and the inverted signals. The output driver may generate an output signal dependent upon the input signal. The output signal may transition between the voltage level of the power signal and the ground reference level.

BACKGROUND Technical Field

Embodiments described herein are related to the field of integratedcircuit implementation, and more particularly to level shiftingcircuits.

Description of the Related Art

Integrated circuits (ICs), such as, for example, systems-on-chip (SoCs),may include more than one power supply for supplying power to variouscircuits in a given SoC. Some power supplies may output a power signalat a different voltage level from other power supplies. In some SoCs,one or more voltage regulators may be used to generate power signals ofvarying voltage levels from a given power supply. These various powersignals may be used by different circuits in an SoC, each power signalsupplying power in what may be referred to as a respective “powerdomain” or “voltage domain.” Circuits being powered by a common powersignal may be considered to be in a same power domain. In an exampleSoC, a processing core may be in a first power domain and a memory maybe in a second power domain. Data and control signals used between thecore and the memory may need to be shifted from the first power domainto the second power domain, and vice versa, through the use of levelshifting circuits.

SUMMARY OF THE EMBODIMENTS

Various embodiments of a processor are disclosed. Broadly speaking, asystem, an apparatus, and a method are contemplated in which theapparatus includes an input circuit coupled to a first power supply witha first voltage level, a power circuit coupled to a second power supplywith a second voltage level, and an output driver. The input circuit maybe configured to receive an input signal, and to generate an invertedsignal dependent upon the input signal. The input signal may transitionbetween the first voltage level and a ground reference level. The powercircuit may be configured to generate a power signal in response to afirst set of values of the input signal and the inverted signal, whereina voltage level of the power signal is dependent upon the second voltagelevel. The power circuit may also generate a third voltage level on thepower signal in response to a second set of values of the input signaland the inverted signal, wherein the third voltage level is less thanthe second voltage level. The output driver may be configured togenerate an output signal dependent upon the input signal. The outputsignal may transition between the voltage level of the power signal andthe ground reference level.

In a further embodiment, the power circuit may be further configured toenter a reduced leakage mode by isolating itself from a ground signal inresponse to a de-assertion of an enable signal. In an embodiment, apull-up device may be coupled to the output signal and to the secondpower supply. The pull-up device may be configured to couple the outputsignal to the second power supply in response to the de-assertion of theenable signal.

In another embodiment, the first voltage level may be greater than thesecond voltage level. In one embodiment, the first voltage level may beless than the second voltage level.

In a further embodiment, the input circuit may include an invertingcircuit configured to receive the input signal as an input to theinverting circuit, and to generate the inverted signal as an output ofthe inverting circuit. In another embodiment, the inverting circuit mayinclude ultra-low voltage threshold (ULVT) Metal-oxide SemiconductorField-effect Transistors (MOSFETs).

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description makes reference to the accompanyingdrawings, which are now briefly described.

FIG. 1 depicts a block diagram of an embodiment of a system-on-a-chip(SoC).

FIG. 2 illustrates a block diagram of an embodiment of a processorcoupled to a memory via level shifting circuits.

FIG. 3 shows a circuit diagram of an embodiment of a level shiftingcircuit.

FIG. 4 shows a flow diagram of an embodiment of a method for operating alevel shifting circuit.

FIG. 5 illustrates a flow diagram of an embodiment of a method forclamping a level shifting circuit.

While the disclosure is susceptible to various modifications andalternative forms, specific embodiments thereof are shown by way ofexample in the drawings and will herein be described in detail. Itshould be understood, however, that the drawings and detaileddescription thereto are not intended to limit the disclosure to theparticular form illustrated, but on the contrary, the intention is tocover all modifications, equivalents and alternatives falling within thespirit and scope of the present disclosure as defined by the appendedclaims. The headings used herein are for organizational purposes onlyand are not meant to be used to limit the scope of the description. Asused throughout this application, the word “may” is used in a permissivesense (i.e., meaning having the potential to), rather than the mandatorysense (i.e., meaning must). Similarly, the words “include,” “including,”and “includes” mean including, but not limited to.

Various units, circuits, or other components may be described as“configured to” perform a task or tasks. In such contexts, “configuredto” is a broad recitation of structure generally meaning “havingcircuitry that” performs the task or tasks during operation. As such,the unit/circuit/component can be configured to perform the task evenwhen the unit/circuit/component is not currently on. In general, thecircuitry that forms the structure corresponding to “configured to” mayinclude hardware circuits. Similarly, various units/circuits/componentsmay be described as performing a task or tasks, for convenience in thedescription. Such descriptions should be interpreted as including thephrase “configured to.” Reciting a unit/circuit/component that isconfigured to perform one or more tasks is expressly intended not toinvoke 35 U.S.C. § 112, paragraph (f) interpretation for thatunit/circuit/component. More generally, the recitation of any element isexpressly intended not to invoke 35 U.S.C. § 112, paragraph (f)interpretation for that element unless the language “means for” or “stepfor” is specifically recited.

DETAILED DESCRIPTION OF EMBODIMENTS

Systems-on-chip (SoCs) may include multiple circuits operating atdifferent power supply level. A voltage level of each power signal maybe different from the other power supplies. As referred to herein, a“power domain” or a “voltage domain” refers to a group of circuitscoupled to a common power signal. When a logic signal is transmittedfrom a first voltage domain into a second voltage domain, the signal mayneed to be level shifted to a voltage level that is compatible with thesecond voltage domain, and vice versa when transmitting a signal fromthe second voltage domain to the first. For example, a first circuit maybe a 1.2V voltage domain, meaning logic signals transition betweenapproximately 1.2V and 0V to indicate logic high and logic low levels,respectively. A second circuit may be in 0.8V voltage domain. A logiclevel from the 1.2V domain may be too high of a voltage level for the0.8V domain, and could possibly damage circuits. Conversely, a logichigh level from the 0.8V domain may be too low to be detected as a logichigh in the 1.2V domain. In addition, voltage level mismatches betweenvoltage domains may cause leakage or other performance issues due totransistors not being turned on completely by the mismatched voltagelevel. Level shifting circuits may be used transmit logic signalsbetween voltage domains and mitigate these types of issues.

Embodiments of systems, devices, and methods for shifting voltage levelsof a logic signal are disclosed herein. The disclosed embodimentsdemonstrate methods for shifting a voltage level of a logic signaltravelling between two voltage domains. Moreover, these embodimentsdisclose level shifting circuits that may be capable of shifting voltagelevels between voltage domains with wide differences between respectivevoltage levels.

Many terms commonly used in reference to SoC designs are used in thisdisclosure. For the sake of clarity, the intended definitions of some ofthese terms, unless stated otherwise, are as follows.

A Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) describes atype of transistor that may be used in modern digital logic designs.MOSFETs are designed as one of two basic types, n-channel and p-channel.N-channel MOSFETs open a conductive path between the source and drainwhen a positive voltage greater than the transistor's threshold voltageis applied between the gate and the source. P-channel MOSFETs open aconductive path when a voltage greater than the transistor's thresholdvoltage is applied between the source and the gate.

Complementary MOSFET (CMOS) describes a circuit designed with a mix ofn-channel and p-channel MOSFETs. In CMOS designs, n-channel andp-channel MOSFETs may be arranged such that a high level on the gate ofa MOSFET turns an n-channel transistor on, i.e., opens a conductivepath, and turns a p-channel MOSFET off, i.e., closes a conductive path.Conversely, a low level on the gate of a MOSFET turns a p-channel on andan n-channel off. In addition, the term transconductance is used inparts of the disclosure. While CMOS logic is used in the examples, it isnoted that any suitable digital logic process may be used for thecircuits described in this disclosure.

It is noted that “high,” “high level,” and “high logic level” refer to avoltage sufficiently large to turn on a n-channel MOSFET and turn off ap-channel MOSFET while “low,” “low level,” and “low logic level” referto a voltage that is sufficiently small enough to do the opposite. Asused herein, a “logic signal” refers to a signal that transitionsbetween a high logic level and a low logic level. In various otherembodiments, different technology may result in different voltage levelsfor “low” and “high.”

The embodiments illustrated and described herein may employ CMOScircuits. In various other embodiments, however, other suitabletechnologies may be employed.

A block diagram of an embodiment of an SoC is illustrated in FIG. 1. Inthe illustrated embodiment, SoC 100 includes processor 101 coupled toMemory Block 102, I/O block 103, Power Management Unit 104,Analog/Mixed-Signal Block 105, Clock Management Unit 106, all coupledthrough Bus 110. Additionally, Power Management Unit 104 may provide aPower Signal 112 a to a first set of the circuit blocks in SoC 100 andPower Signal 114 a to a second set of the circuit blocks. In variousembodiments, SoC 100 may be configured for use in a mobile computingapplication such as, e.g., a tablet computer, smartphone or wearabledevice.

Processor 101 may, in various embodiments, be representative of ageneral-purpose processor that performs computational operations. Forexample, Processor 101 may be a central processing unit (CPU) such as amicroprocessor, a microcontroller, an application-specific integratedcircuit (ASIC), or a field-programmable gate array (FPGA). In someembodiments, Processor 101 may include multiple CPU cores and mayinclude one or more register files and memories. In various embodiments,Processor 101 may implement any suitable instruction set architecture(ISA), such as, e.g., PowerPC™, ARM®, or x86 ISAs, or combinationthereof.

Memory Block 102 may include any suitable type of memory such as, forexample, a Dynamic Random Access Memory (DRAM), a Static Random AccessMemory (SRAM), a Read-only Memory (ROM), Electrically ErasableProgrammable Read-only Memory (EEPROM), a FLASH memory, a FerroelectricRandom Access Memory (FeRAM), Resistive Random Access Memory (RRAM orReRAM), or a Magnetoresistive Random Access Memory (MRAM). Someembodiments may include a single memory, such as Memory Block 102 andother embodiments may include more than two memory blocks (not shown).Memory Block 102, may, in some embodiments, include a memory controllerfor interfacing to memory external to SoC 100, such as, for example, oneor more DRAM chips.

I/O Block 103 may be configured to coordinate data transfer between SOC100 and one or more peripheral devices. Such peripheral devices mayinclude, without limitation, storage devices (e.g., magnetic or opticalmedia-based storage devices including hard drives, tape drives, CDdrives, DVD drives, etc.), audio processing subsystems, graphicsprocessing subsystems, or any other suitable type of peripheral devices.I/O Block 103 may include general-purpose input/output pins (I/O pins).In some embodiments, I/O Block 103 may be configured to implement aversion of Universal Serial Bus (USB) protocol, IEEE 1394 (Firewire)protocol, or Ethernet (IEEE 802.3) networking protocol.

Power Management Unit 104 may be configured to manage power delivery tosome or all of the circuit blocks included in SoC 100. Power ManagementUnit 104 may include sub-blocks for managing multiple power supplies forvarious circuit blocks. In various embodiments, the power supplies maybe located in Analog/Mixed-Signal Block 105, in Power Management Unit104, in other blocks within SoC 100, or come from a source external toSoC 100 and coupled through power supply pins. Power Management Unit 104may include one or more voltage regulators to adjust outputs of thepower supplies to various voltage levels as required by circuit blocksin SoC 100, such as for reduced power modes, for example.

In the illustrated embodiment, Power Management Unit 104 supplies PowerSignal 112 a to Processor 101, I/O Block 103, and Clock Management Unit106. These circuit blocks are in Voltage Domain 112 b. Power ManagementUnit 104 supplies Power Signal 114 a to Memory Block 102 andAnalog/Mixed-Signal Block 105, putting these circuit blocks in VoltageDomain 114 b. If a voltage level of Power Signal 112 a is different thana voltage level of Power Signal 114 a, then logic signals transmittedvia System Bus 110 from a circuit block in the Power Signal 112 avoltage domain may need to be level shifted before being received by acircuit block in the Power Signal 114 a voltage domain.

Analog/Mixed-Signal Block 105 may include a variety of circuitsincluding, for example, a crystal oscillator, an internal oscillator, aphase-locked loop (PLL), delay-locked loop (DLL), or frequency-lockedloop (FLL). One or more analog-to-digital converters (ADCs) ordigital-to-analog converters (DACs) may also be included in Analog/MixedSignal Block 105. In some embodiments, Analog/Mixed-Signal Block 105 mayalso include radio frequency (RF) circuits that may be configured foroperation with cellular telephone networks. Analog/Mixed-Signal Block105 may include one or more voltage regulators to supply one or morevoltages to various circuit blocks and circuits within those blocks.

Clock Management Unit 106 may be configured to enable, configure andmonitor outputs of one or more clock sources. In various embodiments,the clock sources may be located in Analog/Mixed-Signal Block 105,within Clock Management Unit 106, in other blocks within SOC 100, orcome from external to SoC 100, coupled via one or more I/O pins. ClockManagement Unit 106 may include circuits for selecting an outputfrequency or reference clock of a PLL, FLL, DLL, or other type ofclosed-loop clock source.

System Bus 110 may be configured as one or more buses to coupleProcessor 101 to the other circuit blocks within the SOC 100 such as,e.g., Memory Block 102 and I/O Block 103. In some embodiments, SystemBus 110 may include interfaces coupled to one or more of the circuitblocks that allow a particular circuit block to communicate through thebus. In some embodiments, System Bus 110 may allow movement of data andtransactions (i.e., requests and responses) between circuit blockswithout intervention from Processor 101. For example, data receivedthrough the I/O Block 103 may be stored directly to Memory Block 102.

It is noted that the SoC illustrated in FIG. 1 is merely an example. Inother embodiments, different circuit blocks and different configurationsof circuit blocks may be possible dependent upon the specificapplication for which the SOC is intended.

Turning to FIG. 2, a block diagram of an embodiment of a processorcoupled to a memory via level shifting circuits is illustrated.Processor 201 is coupled to Memory 202 via Level Shifters 210 a and 210b. Each of Level Shifters 210 a-b include a respective Input Circuit 203a-b, Power Latch 205 a-b, and Output Driver 207 a-b. Processor 201receives power signal VCore 211 and Memory 202 receives power signalVMem 212. In some embodiments, Processor 201 may correspond to Processor101 in FIG. 1 and Memory 202 may correspond to Memory 102. Level Shifter210 a receives Input Signal 213 a and generates Output Signal 215 adepending on internal signals Inverted Input signal 214 a and PowerSignal 216 a. Likewise, Level Shifter 210 b utilizes similar signalsInput Signal 213 b, Inverted Input Signal 214 b, Power Signal 216B andgenerates Output Signal 215 b.

In the illustrated embodiment, Processor 201 is in the VCore 211 voltagedomain and Memory 202 is in the VMem 212 voltage domain. In the presentembodiment, VMem 212 has a voltage level lower than VCore 211 and,therefore, Level Shifter 210 a is used to shift logic signals fromProcessor 201 into the VMem 212 voltage domain and Level Shifter 210 bis used to shift signals from Memory 202 into the VCore voltage domain.

When Processor 201 sends Input Signal 213 a to Memory 202, Input Signal213 a is received by Input Circuit 203 a, which is also in the VCore 211voltage domain. Input Circuit 203 a outputs two signals, the originalInput Signal 213 a and Inverted Input Signal 214 a that is the inverseof the Input Signal 213 a. Both of these signals remain in the VCorevoltage domain. Power Latch 205 a receives both Input Signal 213 a andInverted Input Signal 214 a from Input Circuit 203 a while Output Driver207 a receives Inverted Input Signal 214 a.

In the current embodiment, Power Latch 205 a compares the logic levelsof Input Signal 213 a and Inverted Input Signal 214 a. Power Latch 205 ais in the VMem 212 voltage domain. Since the signals received from InputCircuit 203 a are in the higher voltage VCore 211 voltage domain,circuit elements coupled to these received signals may be designed tohandle the higher voltage level without damage. The logic levels ofInput Signal 213 a and Inverted Input Signal 214 a are compared. IfInput Signal 213 a is high and Inverted Input Signal 214 a thereforelow, then Power Latch 205 a generates an Power Signal 216 a with avoltage level approximately equal to the voltage level of VMem 212.Otherwise, if Inverted Input Signal 214 a is high and Input Signal 213 alow, then Power Latch 205 a generates the Power Signal 216 a with alower voltage level, closer to a ground reference voltage. Power Signal216 a is used to provide power to Output Driver 207 a.

Output Driver 207 a receives Inverted Input Signal 214 a as an input andreceives Power Signal 216 a as a power source. Similar to Power Latch205 a, Output Driver 207 a includes circuit elements coupled to InvertedInput Signal 214 a that are in the higher voltage VCore 211 voltagedomain. These circuit elements may also be designed to handle the highervoltage level of Inverted Input Signal 214 a without damage. If InvertedInput Signal 214 a is high (i.e. input signal is low), then Power Signal216 a is at a low voltage level, and Output Driver 207 a generates alogic low on Output Signal 215 a, which corresponds to the logic lowlevel of Input Signal 213 a from Processor 201. Conversely, if InvertedInput Signal 214 a is low (i.e. Input Signal 213 a is high), then PowerSignal 216 a is approximately equal to VMem 212, and Output Driver 207 agenerates a logic high value on Output Signal 215 a in the VMem 212voltage domain.

When Memory 202 sends Input Signal 213 b to Processor 201, a similarprocessor occurs through the elements of Level Shifter 210 b. In thisreverse case, Input Circuit 203 b is in the VMem 212 voltage domainwhile Power Latch 205 b is in the higher voltage VCore 211 voltagedomain. The circuit elements of Power Latch 205 b and Output Driver 207b that are coupled to Input Signal 213 b and Inverted Input Signal 214 breceived from Input Circuit 203 b may be designed to recognize logichigh levels from the lower voltage VMem 212 voltage domain. Power Signal216 b from Power Latch 205 b is approximately equal to VCore 211 whenInput Signal 213 b from Memory 202 is high, and, like Power Latch 205 a,approaches the ground reference voltage when Input Signal 213 b is low.Output Driver 207 b generates Output Signal 215 b in the VCore voltagedomain corresponding to the logic state of Input Signal 213 b fromMemory 202.

It is noted that, to improve clarity and to aid in demonstrating thedisclosed concepts, the diagram illustrated in FIG. 2 has beensimplified. In other embodiments, different and/or additional circuitblocks and different configurations of the circuit blocks are possibleand contemplated. The present embodiment uses a processor and a memoryas circuit blocks communicating across two voltage domains. In otherembodiments, however, any two circuit blocks may communicate acrossvoltage domains. Additionally, although the voltage level of VCore 211is greater than the voltage level of VMem 212 in the illustratedexample, the opposite may be true in other embodiments.

Moving to FIG. 3, a circuit diagram of an embodiment circuit diagram ofan embodiment of a level shifting circuit is shown. Level ShiftingCircuit 300 may correspond to Level Shifter 210 a or 210 b in FIG. 2,and includes circuits for Input Circuit 303, Power Latch 305, and OutputDriver 307. Input Circuit 303 includes inverting circuit (INV) 320, andreceives power signal VCore 311. Power Latch 305 includes transistors Q321, Q 323, Q 324, Q 325, Q 326, Q 327, and Q 328, and receives powersignal VMem 312. Output Driver 307 includes transistors Q 329, Q330, andQ 331, and receives power from VMem 312 as well as from Power Signal 316of Power Latch 305. Input Circuit 303 receives Input Signal (Input) 313and generates Inverted Input Signal (Inverted Input) 314. Level ShiftingCircuit 300 receives Enable Signal (Enable) 317 and generates OutputSignal 315.

In the illustrated embodiment, Level Shifting Circuit 300 operatesgenerally as described for Level Shifter 210 a in FIG. 2. In addition tothe description in FIG. 2, Enable Signal 317 is asserted to enable LevelShifting Circuit 300 when Input Signal 313 needs to be transmitted fromthe VCore 311 voltage domain to the VMem 312 voltage domain. If InputSignal 313 is inactive (for example, if Processor 201 drives InputSignal 313 and is idle), then Enable Signal 317 is de-asserted to pulloutput signal 315 into a known state. More specifically, Enable Signal317 is driven to a logic low, causing Q 321 to be turned off, therebyisolating Power Latch 305 from the ground signal and reducing an amountof current that may leak through Power Latch 305 to the ground signal.In addition, the low value of Enable Signal 317 turns Q 331 on, pullingthe voltage level of Output Signal 315 to VMem 312. Q 331, therefore,acts as a pull-up device to prevent the voltage level of Output Signal315 from discharging down to the ground reference level, and providing aknown idle state to circuits coupled to Output Signal 315. This processof pulling Output Signal 315 to a known (in the present embodiment, alogic high) state is referred to herein as “clamping” the output, oralso as “logic fencing.” In addition, as used herein, a “pull-up device”corresponds to a MOSFET or other suitable circuit element that couples agiven signal to a power supply signal to prevent the given signal fromdischarging to a lower voltage level than a voltage level of the powersupply signal.

When Enable Signal 317 is asserted, i.e., at a logic high value, Q 321is turned on, coupling Power Latch 305 to the ground signal, and Q 331is turned off, allowing Output Signal 315 to be driven by Q 329 and Q330. While Level Shifting Circuit 300 is enabled, INV 320 receives InputSignal 313 and outputs Inverted Input Signal 314 to Q 326, Q 329, andQ330. Input Signal 313 also goes to Q 323. INV 320 may correspond to aninverting amplifier, although, in other embodiments, any suitablecircuit that outputs an inverted value of an input signal may be used.In some embodiments, INV 320 may include ultra-low voltage threshold(ULVT) MOSFETs, allowing INV 320 to operate properly even when receivingvery low input voltage levels.

If Input Signal 313 is low, then Q 323 is turned off and Inverted InputSignal 314 is high (with a voltage level approximately equal to thevoltage level of VCore 311). The high level on Inverted Input Signal 314turns Q 330 off and turns Q 326 and Q 329 on. With Q 326 on and Q 323off, Q 324 and Q 328 are turned off and Q 325 and Q 327 are turned on.With Q 327 on, Power Signal 316 is pulled down towards the groundreference voltage.

It is noted that, in the illustrated embodiment, the gate terminals of Q324 and Q 327 are coupled to the source terminals of Q 324 and Q 327,respectively. This coupling of the gate terminals to the sourceterminals may cause Q324 and Q 327 to operate similar to diodes, e.g.,passing a current from the drain terminals to the source terminals whena voltage at the drain terminals is higher than a drain-to-gatethreshold voltage of the transistors. As a result, a voltage drop may beobserved between each of the drain and source terminals of Q 324 and Q327. Accordingly, the voltage level applied to the drain terminal of Q330 may be higher than the ground reference voltage, yet lower than VMem312.

It is also noted that, although the present embodiment includes MOSFETsas circuit elements, other transistor technologies are known andcontemplated. The MOSFET terminals identified herein as “gate terminal,”“drain terminal,” and “source terminal” may be substituted withcorresponding terminals included in other transistor types by a personskilled in the art.

With Q329 on and Q 330 off, Output Signal 315 is discharged to theground reference through Q 329 and Q 321. The lower voltage on the drainterminal of Q 330 may increase a speed of transition to the logic low onOutput Signal 315, and may reduce potential leakage through Q 330.

Conversely, if Input Signal 313 is high (with a voltage levelapproximately equal to the voltage level of VCore 311) then Q 323 isturned on and Inverted Input Signal 314 is low. The low level onInverted Input Signal 314 causes Q 326 and Q 329 to be turned off and Q330 to be turned on. When Q 323 is turned on and Q 326 is turned off, Q324 and Q 328 are turned on and Q 325 and Q 327 are turned off. As aresult of Q 328 being turned on, a high signal (approximately equal toVMem 312) is transmitted to Q 330 via Power Signal 316. Since Q 330 ison due to the low level on Inverted Input Signal 314, the high level onPower Signal 316 is transmitted through Q 330 and onto Output Signal315.

The diode structures create by Q 324 and Q 327 may result in Q 328 and Q325, respectively, not requiring as low of a voltage level on their gateterminals to turn on, which may shorten a time to transition PowerSignal 316 from high to low, and vice versa. This easier switching mayresult in Level Shifting Circuit 300 functioning properly even when avoltage difference between VCore 311 and VMem 312 is large.Additionally, driving the drain terminal of Q 330 with the output ofPower Latch 305, rather than directly from VMem 312, may further improvethe tolerance of Level Shifting Circuit 300 to large voltage differencesbetween VCore 311 and VMem 312, particularly if VMem 312 is larger thanVCore 311. As a result, Level Shifting Circuit 300 may provide levelshifting capabilities across voltage domains with a wide range ofrespective voltage levels.

It is noted that Level Shifting Circuit 300 illustrated in FIG. 3 ismerely an example. The circuit diagram includes sufficient elements fordemonstrating the disclosed concepts. In other embodiments, additionalcircuit elements may be included. Furthermore, the placement of thecircuit elements in FIG. 3 is not intended to imply an actual locationof the elements in physical embodiments of the circuit.

Turning now to FIG. 4, a flow diagram of an embodiment of a method foroperating a level shifting circuit, such as Level Shifting Circuit 300,is illustrated. Referring collectively to the diagram of FIG. 4 andLevel Shifting Circuit 300, method 400 begins in block 401.

An input signal is received by Level Shifting Circuit 300 (block 402).In the present embodiment, Input Signal 313 is received by LevelShifting Circuit 300, and more specifically, by Input Circuit 303 andPower Latch 305. Input Signal 313 may be generated by a circuit block inan SoC, such as, for example, Processor 201 in FIG. 2. Input Signal 313may, therefore, be in a voltage domain of VCore 311. A circuit block toreceive Input Signal 313 is in a different voltage domain, such as, forexample a VMem 312 voltage domain.

Input Circuit 303 generates a signal corresponding to the inverse ofInput Signal 313 (block 403). In the illustrated embodiment, InputCircuit 303 includes an inverting circuit, INV 320, that receives InputSignal 313 and inverts the logic state of the signal such that whenInput Signal 313 is high, the output of IVN 320 (i.e., Inverted InputSignal 314) is low, and vice versa. Inverted Input Signal 314 isprovided to both Power Latch 305 and Output Driver 307.

Further operations of Method 400 may depend on the logic values of InputSignal 313 and Inverted Input Signal 314 (block 404). Power Latch 305receives both Input Signal 313 and Inverted Input Signal 314 andcompares the logic values of the two signals. If Input Signal 313 ishigh and Inverted Input Signal 314 is low, then the method moves toblock 405 to generate a first voltage level. Otherwise, the method movesto block 407 to generate a second voltage level.

If Input Signal 313 is high and Inverted Input Signal 314 is low, thenPower Latch 305 generates a first voltage level (block 405). When InputSignal 313 is high, Q 328 in Power Latch 305 is turned on and Q 327 isturned off due to the low level on the inverted input signal. Power fromVMem 312 is passed through Q 328 and provided to Power Signal 316.

Output Driver 307 generates the first voltage level on Output Signal 315(block 406). Output Driver 307 receives the first voltage level fromPower Signal 316 on a drain terminal of Q 330. The low level on InvertedInput Signal 314 causes Q 330 to turn on and Q 329 to turn off, allowingthe first voltage level from Power Signal 316 to pass through Q 330 andonto Output Signal 315. The first voltage level on Output Signal 315 isapproximately equal to the voltage level of VMem 312, or in other words,a high logic level in the VMem 312 voltage domain is generated inresponse to the high logic level on Input Signal 313 in the VCore 311voltage domain. It is noted that, dependent upon parameters of Q 328 andQ 330, as well as a current draw on Output Signal 315, some amount ofvoltage drop may occur between VMem 312 and Output Signal 315 such thata voltage level on Output Signal 315 may be slightly lower than thevoltage level of VMem 312. Upon generating the high logic level onOutput Signal 315, the method ends in block 410.

If, in block 404, Input Signal 313 is low and Inverted Input Signal 314is, therefore, high, then Power Latch 305 generates a second voltagelevel (block 407). When Input Signal 313 is low, Q 328 in Power Latch305 is turned off and Q 327 is turned on due to the high level onInverted Input Signal 314. The drain terminal of Q 327 is coupled, via Q326 and Q 321 to the ground reference. Q 327, however, is configured asa diode structure due to its gate terminal being coupled to its sourceterminal. This diode configuration of Q 327 may create a voltage dropfrom the drain terminal to the source terminal of Q 327 and, therefore,the second voltage level on Power Signal 316 may be higher than theground reference voltage level.

Output Driver 307 generates a third voltage level on Output Signal 315(block 406). Since Inverted Input Signal 314 is high, Q 330 is turnedoff and Q 329 is turned on. With the second voltage level from PowerSignal 316 on the drain terminal and the high level on the gate terminalof Q 330, Q 330 is turned off and any potential leakage through Q 330 isminimized, allowing Q 329 to discharge Output Signal 315 towards theground reference via Q 321. Accordingly, a low logic level is producedon Output Signal 315 in the VMem 312 voltage domain in response to thelow logic level of Input Signal 313 in the VCore 311 voltage domain. (Itis noted that a low level in the VCore 311 voltage domain may be at asame voltage level as a low level in the VMem 312 voltage domain). Themethod, upon generating the low level on Output Signal 315, ends inblock 410.

It is noted that the method illustrated in FIG. 4 is an example fordemonstration purposes. In some embodiments, additional operations maybe included. Additionally, some or all operations may be performed in adifferent order in various embodiments.

Moving now to FIG. 5, a flow diagram illustrating an embodiment of amethod for isolating a level shifting circuit, such as Level ShiftingCircuit 300, to reduce leakage current is shown. Referring collectivelyto Level Shifting Circuit 300 and the flow diagram of FIG. 5, the methodbegins in block 501.

An enable signal is received by Level Shifting Circuit 300 (block 502).In the illustrated embodiment, Level Shifting Circuit 300 receives anenable signal, such as, for example, Enable Signal 317. In variousembodiments, Enable Signal 317 may be generated by a circuit blockcoupled to Input Signal 313, a circuit block coupled to Output Signal315, or a power management unit that controls VCore 311 and/or VMem 312.For example, referring to FIG. 2, Enable Signal 317 may be generated byProcessor 201 and asserted when Processor 201 has data to send to Memory202. Conversely, Enable Signal 317 may be generated by Memory 202 and bede-asserted if Memory 202 enters a reduced power mode.

Further operations of the method may depend on a value of Enable Signal317 (block 503). To place Level Shifting Circuit in an active state,Enable Signal 317 is asserted, i.e., driven to a logic high level. Toreduce power when Level Shifting Circuit 300 is not in use, EnableSignal 317 is de-asserted, i.e., driven to a logic low level. IF EnableSignal 317 is high, then the method moves to block 504 to generate anoutput signal. Otherwise, the method moves to block 505 to isolate PowerLatch 305 from a ground reference.

If Enable Signal 317 is high, then Level Shifting Circuit 300 generatesan Output Signal 315 dependent upon a value of Input Signal 313 (block504). While enabled, Level Shifting Circuit 300 transmits Input Signal313 from the VCore 311 voltage domain into the VMem 312 voltage domain.In some embodiments, block 504 may correspond to Method 400 in FIG. 4.The method may end in block 507.

If Enable Signal 317 is low, then Level Shifting Circuit 300 isolatesthe power latch from the ground reference (block 505). Enable Signal 317is coupled to the gate terminal of Q 321. When the gate terminal is low,Q 321 is turned off and Power Latch 305 is isolated from the groundreference. In some embodiments, Output Driver 307 may also be isolatedfrom the ground reference.

A voltage level of Output Signal 315 is pulled to a given voltage level(block 506). In the present embodiment, Enable Signal 317 is coupled tothe gate terminal of Q 331. The low level of Enable Signal 317 turns Q331 on, allowing VMem 312 to be passed onto Output Signal 315. Q 331 maybe designed as a pull-up device to pull a voltage level of Output Signal315 towards a voltage level of VMem 312. Dependent upon parameters of Q331 and a current load placed on Output Signal 315, the voltage level ofOutput Signal 315 may be at or near the voltage level of VMem 312. As aresult, Output Signal 315 is clamped to VMem 312, and therefore,provides a known idle state to circuits coupled to Output Signal 315.The method ends in block 507.

It is noted that the method illustrated in FIG. 5 is merely an example.In other embodiments, additional operations may be included or someoperations may be performed in a different order.

Although specific embodiments have been described above, theseembodiments are not intended to limit the scope of the presentdisclosure, even where only a single embodiment is described withrespect to a particular feature. Examples of features provided in thedisclosure are intended to be illustrative rather than restrictiveunless stated otherwise. The above description is intended to cover suchalternatives, modifications, and equivalents as would be apparent to aperson skilled in the art having the benefit of this disclosure.

The scope of the present disclosure includes any feature or combinationof features disclosed herein (either explicitly or implicitly), or anygeneralization thereof, whether or not it mitigates any or all of theproblems addressed herein. Accordingly, new claims may be formulatedduring prosecution of this application (or an application claimingpriority thereto) to any such combination of features. In particular,with reference to the appended claims, features from dependent claimsmay be combined with those of the independent claims and features fromrespective independent claims may be combined in any appropriate mannerand not merely in the specific combinations enumerated in the appendedclaims.

What is claimed is:
 1. An apparatus, comprising: an input circuitcoupled to a first power supply with a first voltage level, wherein theinput circuit is configured to: receive an input signal, wherein theinput signal transitions between the first voltage level and a groundreference level; and generate an inverted signal that is based on theinput signal; a power circuit coupled to a second power supply with asecond voltage level, wherein the power circuit is configured to:generate a power signal in response to a first set of values of theinput signal and the inverted signal, wherein a voltage level of thepower signal is dependent upon the second voltage level; and generate athird voltage level on the power signal in response to a second set ofvalues of the input signal and the inverted signal, wherein the thirdvoltage level is less than the second voltage level and greater than theground reference level; and an output driver configured to: receivepower from the power signal; and generate an output signal that is basedon a value of the inverted signal, wherein the output signal transitionsbetween the voltage level of the power signal and the ground referencelevel.
 2. The apparatus of claim 1, wherein the power circuit is furtherconfigured to enter a reduced leakage mode by isolating itself from aground signal in response to a de-assertion of an enable signal.
 3. Theapparatus of claim 2, further comprising a pull-up device coupled to theoutput signal and to the second power supply, wherein the pull-up deviceis configured to couple the output signal to the second power supply inresponse to the de-assertion of the enable signal.
 4. The apparatus ofclaim 1, wherein the first voltage level is greater than the secondvoltage level.
 5. The apparatus of claim 1, wherein the output driver isfurther configured to generate the output signal with a low level valuein response to receiving the third voltage level on the power signal. 6.The apparatus of claim 1, wherein the input circuit includes aninverting circuit configured to: receive the input signal as an input tothe inverting circuit; and generate the inverted signal as an output ofthe inverting circuit; wherein the inverting circuit includes ultra-lowvoltage threshold (ULVT) Metal-oxide Semiconductor Field-effectTransistors (MOSFETs).
 7. The apparatus of claim 6, wherein the outputdriver is further configured to receive the power signal at a sourceterminal of a p-channel Metal-oxide Semiconductor Field-effectTransistor (MOSFET).
 8. A method comprising: receiving, by an inputcircuit coupled to a first power supply with a first voltage level, aninput signal, wherein the input signal transitions between the firstvoltage level and a ground reference level; generating, by the inputcircuit, an inverted signal that is based on the input signal;generating, by a power circuit coupled to a second power supply with asecond voltage level, a power signal in response to a first set ofvalues of the input signal and the inverted signal, wherein a voltagelevel of the power signal is dependent upon the second voltage level;generating, by the power circuit, a third voltage level on the powersignal in response to a second set of values of the input signal and theinverted signal, wherein the third voltage level is less than the secondvoltage level and greater than the ground reference level; receiving, byan output driver, power from the power signal; and generating, by theoutput driver, an output signal that is based on a value of the invertedsignal, wherein the output signal transitions between the voltage levelof the power signal and the ground reference level.
 9. The method ofclaim 8, further comprising isolating the power circuit from a groundsignal in response to a de-assertion of an enable signal.
 10. The methodof claim 9, further comprising coupling, by a pull-up device, the outputsignal to the second power supply in response to the de-assertion of theenable signal.
 11. The method of claim 8, wherein the first voltagelevel is greater than the second voltage level.
 12. The method of claim8, further comprising generating, by the output driver, the outputsignal with a low level value in response to receiving the third voltagelevel on the power signal.
 13. The method of claim 8, further comprisingreceiving, by the output driver, the power signal at a source terminalof a p-channel Metal-oxide Semiconductor Field-effect Transistor(MOSFET).
 14. A system, comprising: a processor coupled to a first powersupply with a first voltage level; a memory coupled to a second powersupply with a second voltage level; and a level shifting circuit coupledto the processor and to the memory, wherein the level shifting circuitis configured to: receive an input signal from the processor, whereinthe input signal transitions between the first voltage level and aground reference level; generate an inverted signal that is based on theinput signal; generate a power signal in response to a first set ofvalues of the input signal and the inverted signal, wherein a voltagelevel of the power signal is dependent upon the second voltage level;generate a third voltage level on the power signal in response to asecond set of values of the input signal and the inverted signal,wherein the third voltage level is less than the second voltage leveland greater than the ground reference level; utilize the power signal toprovide power to an output driver included in the level shiftingcircuit; and generate an output signal that is based on a value of theinverted signal, wherein the output signal transitions between thevoltage level of the power signal and the ground reference level. 15.The system of claim 14, wherein the level shifting circuit is furtherconfigured to enter a reduced leakage mode in response to a de-assertionof an enable signal.
 16. The system of claim 15, wherein the levelshifting circuit includes a pull-up device coupled to the output signaland to the second power supply, wherein the pull-up device is configuredto couple the output signal to the second power supply in response tothe de-assertion of the enable signal.
 17. The system of claim 14,wherein the first voltage level is greater than the second voltagelevel.
 18. The system of claim 14, wherein the output driver is furtherconfigured to generate the output signal with a low level value inresponse to receiving the third voltage level on the power signal. 19.The system of claim 14, wherein the level shifting circuit includes aninverting circuit configured to: receive the input signal as an input tothe inverting circuit; and generate the inverted signal as an output ofthe inverting circuit; wherein the inverting circuit includes ultra-lowvoltage threshold (ULVT) Metal-oxide Semiconductor Field-effectTransistors (MOSFETs).
 20. The system of claim 19, wherein the power isprovided to the output driver at a source terminal of a p-channelMetal-oxide Semiconductor Field-effect Transistor (MOSFET).